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Home > Products > Transistors > FETs, MOSFETs > ///IPB019N06L3GATMA1

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IPB019N06L3GATMA1Quantity:10943

Part No IPB019N06L3GATMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 60V 120A D2PAK
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

RdsOn(Max)@Id2.2V @ 196µA
Vgs(th)(Max)@Id±20V
Vgs166 nC @ 4.5 V
FETFeature250W (Tc)
DraintoSourceVoltage(Vdss)60 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypePG-TO263-3
InputCapacitance(Ciss)(Max)@Vds-
SeriesOptiMOS™
Qualification
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C120A (Tc)
Vgs(Max)28000 pF @ 30 V
MinRdsOn)1.9mOhm @ 100A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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