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Home > Products > Transistors > FETs, MOSFETs > ///IPB009N03LGATMA1

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IPB009N03LGATMA1Quantity:12505

Part No IPB009N03LGATMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 30V 180A TO263-7
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id227 nC @ 10 V
Vgs(th)(Max)@Id-
Vgs25000 pF @ 15 V
FETFeatureSurface Mount
DraintoSourceVoltage(Vdss)30 V
OperatingTemperatureTO-263-7, D2PAK (6 Leads + Tab)
DriveVoltage(MaxRdsOn0.95mOhm @ 100A, 10V
ProductStatusObsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType4.5V, 10V
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 175°C (TJ)
SeriesOptiMOS™
Qualification
SupplierDevicePackage±20V
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C180A (Tc)
Vgs(Max)250W (Tc)
MinRdsOn)2.2V @ 250µA
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)PG-TO263-7-3

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