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Home > Products > Transistors > FETs, MOSFETs > ///IPB012N04NF2SATMA1

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Part No IPB012N04NF2SATMA1
Manufacturer Infineon Technologies
Description TRENCH <= 40V
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id3.4V @ 189µA
Vgs(th)(Max)@Id±20V
Vgs239 nC @ 10 V
FETFeature3.8W (Ta), 250W (Tc)
DraintoSourceVoltage(Vdss)40 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn6V, 10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypePG-TO263-3
InputCapacitance(Ciss)(Max)@Vds-
SeriesStrongIRFET™2
Qualification
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C41A (Ta), 197A (Tc)
Vgs(Max)11300 pF @ 20 V
MinRdsOn)1.25mOhm @ 100A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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