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Home > Products > Transistors > FETs, MOSFETs > ///IPB018N10N5ATMA1

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Part No IPB018N10N5ATMA1
Manufacturer Infineon Technologies
Description TRENCH >=100V
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id210 nC @ 10 V
Vgs(th)(Max)@Id16000 pF @ 50 V
Vgs±20V
FETFeature-55°C ~ 175°C (TJ)
DraintoSourceVoltage(Vdss)100 V
OperatingTemperaturePG-TO263-3
DriveVoltage(MaxRdsOn1.83mOhm @ 100A, 10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
InputCapacitance(Ciss)(Max)@Vds3.8W (Ta), 375W (Tc)
SeriesOptiMOS™ 5
Qualification
SupplierDevicePackage6V, 10V
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C33A (Ta), 176A (Tc)
Vgs(Max)-
MinRdsOn)3.8V @ 270µA
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)Surface Mount

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