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Home > Products > Transistors > FETs, MOSFETs > ///IPB011N04NGATMA1

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Part No IPB011N04NGATMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 40V 180A TO263-7
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id4V @ 200µA
Vgs(th)(Max)@Id±20V
Vgs250 nC @ 10 V
FETFeature250W (Tc)
DraintoSourceVoltage(Vdss)40 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypePG-TO263-7-3
InputCapacitance(Ciss)(Max)@Vds-
SeriesOptiMOS™
Qualification
SupplierDevicePackageTO-263-7, D2PAK (6 Leads + Tab)
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C180A (Tc)
Vgs(Max)20000 pF @ 20 V
MinRdsOn)1.1mOhm @ 100A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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