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Home > Products > Transistors > FETs, MOSFETs > ///CGD65B200S2-T13

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CGD65B200S2-T13Quantity:9427

Part No CGD65B200S2-T13
Manufacturer Cambridge GaN Devices
Description 650V GAN HEMT, 200MOHM, DFN5X6.
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id1.4 nC @ 12 V
Vgs(th)(Max)@Id-
Vgs+20V, -1V
FETFeature-55°C ~ 150°C (TJ)
DraintoSourceVoltage(Vdss)650 V
OperatingTemperature8-DFN (5x6)
DriveVoltage(MaxRdsOn280mOhm @ 600mA, 12V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType8-PowerVDFN
InputCapacitance(Ciss)(Max)@Vds-
SeriesICeGaN™
Qualification
SupplierDevicePackage9V, 20V
FETType-
TechnologyGaNFET (Gallium Nitride)
Current-ContinuousDrain(Id)@25°C8.5A (Tc)
Vgs(Max)Current Sensing
MinRdsOn)4.2V @ 2.75mA
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)Surface Mount

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