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Buy CGD65B200S2-T13 with confidence from acme-chip.com, 1 Year Warranty
See Product Specifications for product details.
Buy CGD65B200S2-T13 with confidence from acme-chip.com, 1 Year Warranty
CGD65B200S2-T13Quantity:9427
Part No | CGD65B200S2-T13 |
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Manufacturer | Cambridge GaN Devices |
Description | 650V GAN HEMT, 200MOHM, DFN5X6. |
Lead Free Status / RoHS Status | Contains lead / RoHS compliant |
Datasheets |
Specifications
RdsOn(Max)@Id | 1.4 nC @ 12 V |
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Vgs(th)(Max)@Id | - |
Vgs | +20V, -1V |
FETFeature | -55°C ~ 150°C (TJ) |
DraintoSourceVoltage(Vdss) | 650 V |
OperatingTemperature | 8-DFN (5x6) |
DriveVoltage(MaxRdsOn | 280mOhm @ 600mA, 12V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | 8-PowerVDFN |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | ICeGaN™ |
Qualification | |
SupplierDevicePackage | 9V, 20V |
FETType | - |
Technology | GaNFET (Gallium Nitride) |
Current-ContinuousDrain(Id)@25°C | 8.5A (Tc) |
Vgs(Max) | Current Sensing |
MinRdsOn) | 4.2V @ 2.75mA |
Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
PowerDissipation(Max) | Surface Mount |
Introduce
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