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See Product Specifications for product details.
Buy CGD65B130SH2 with confidence from acme-chip.com, 1 Year Warranty
See Product Specifications for product details.
Buy CGD65B130SH2 with confidence from acme-chip.com, 1 Year Warranty
CGD65B130SH2Quantity:5000
Part No | CGD65B130SH2 |
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Manufacturer | Charter Engineering Inc. |
Description | 650V GAN HEMT, 130MOHM, DFN5X6. |
Lead Free Status / RoHS Status | Contains lead / RoHS compliant |
Datasheets |
Specifications
Operating Temperature | -55°C ~ 150°C (TJ) |
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FET Feature | - |
Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
FET Type | P-Channel |
Input Capacitance (Ciss) (Max) @ Vds | - |
Gate Charge (Qg) (Max) @ Vgs | 1.9 nC @ 12 V |
Grade | - |
Mounting Type | Surface Mount |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 182mOhm @ 900mA, 12V |
Vgs(th) (Max) @ Id | 4.2V @ 4.2mA |
Supplier Device Package | 8-DFN (5x6) |
Drain to Source Voltage (Vdss) | 650 V |
Series | ICeGaN™ |
Power Dissipation (Max) | - |
Qualification | - |
Package / Case | 8-PowerVDFN |
Technology | GaNFET (Gallium Nitride) |
Current - Continuous Drain (Id) @ 25°C | 12A |
Vgs (Max) | +20V, -1V |
Drive Voltage (Max Rds On, Min Rds On) | 12V |
Introduce
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