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Buy CGD65A055S2-T07 with confidence from acme-chip.com, 1 Year Warranty
See Product Specifications for product details.
Buy CGD65A055S2-T07 with confidence from acme-chip.com, 1 Year Warranty
CGD65A055S2-T07Quantity:11352
Part No | CGD65A055S2-T07 |
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Manufacturer | Cambridge GaN Devices |
Description | 650V GAN HEMT, 55MOHM, DFN8X8. W |
Lead Free Status / RoHS Status | Contains lead / RoHS compliant |
Datasheets |
Specifications
RdsOn(Max)@Id | 77mOhm @ 2.2A, 12V |
---|---|
Vgs(th)(Max)@Id | 6 nC @ 12 V |
Vgs | 4.2V @ 10mA |
FETFeature | - |
DraintoSourceVoltage(Vdss) | - |
OperatingTemperature | - |
DriveVoltage(MaxRdsOn | 27A (Tc) |
ProductStatus | Active |
Package/Case | 16-DFN (8x8) |
GateCharge(Qg)(Max)@Vgs | 16-PowerVDFN |
Grade | |
MountingType | - |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | ICeGaN™ |
Qualification | |
SupplierDevicePackage | Surface Mount |
FETType | GaNFET (Gallium Nitride) |
Technology | Current Sensing |
Current-ContinuousDrain(Id)@25°C | 650 V |
Vgs(Max) | +20V, -1V |
MinRdsOn) | 12V |
Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Introduce
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