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Home > Products > Transistors > FETs, MOSFETs > ///CGD65A055S2-T07

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Part No CGD65A055S2-T07
Manufacturer Cambridge GaN Devices
Description 650V GAN HEMT, 55MOHM, DFN8X8. W
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id77mOhm @ 2.2A, 12V
Vgs(th)(Max)@Id6 nC @ 12 V
Vgs4.2V @ 10mA
FETFeature-
DraintoSourceVoltage(Vdss)-
OperatingTemperature-
DriveVoltage(MaxRdsOn27A (Tc)
ProductStatusActive
Package/Case16-DFN (8x8)
GateCharge(Qg)(Max)@Vgs16-PowerVDFN
Grade
MountingType-
InputCapacitance(Ciss)(Max)@Vds-
SeriesICeGaN™
Qualification
SupplierDevicePackageSurface Mount
FETTypeGaNFET (Gallium Nitride)
TechnologyCurrent Sensing
Current-ContinuousDrain(Id)@25°C650 V
Vgs(Max)+20V, -1V
MinRdsOn)12V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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