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Home > Products > Transistors > FETs, MOSFETs > ///CGD65B130S2-T13

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CGD65B130S2-T13Quantity:7785

Part No CGD65B130S2-T13
Manufacturer Cambridge GaN Devices
Description 650V GAN HEMT, 130MOHM, DFN5X6.
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id4.2V @ 4.2mA
Vgs(th)(Max)@Id+20V, -1V
Vgs2.3 nC @ 12 V
FETFeature-
DraintoSourceVoltage(Vdss)650 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn9V, 20V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType8-DFN (5x6)
InputCapacitance(Ciss)(Max)@VdsCurrent Sensing
SeriesICeGaN™
Qualification
SupplierDevicePackage8-PowerVDFN
FETType-
TechnologyGaNFET (Gallium Nitride)
Current-ContinuousDrain(Id)@25°C12A (Tc)
Vgs(Max)-
MinRdsOn)182mOhm @ 900mA, 12V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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