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Home > Products > Transistors > FETs, MOSFETs > ///CGD65A130SH2

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CGD65A130SH2Quantity:3500

Part No CGD65A130SH2
Manufacturer Cambridge GaN Devices
Description 650V GAN HEMT, 130MOHM, DFN8X8.
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Operating Temperature-55°C ~ 150°C (TJ)
FET Feature-
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds-
Gate Charge (Qg) (Max) @ Vgs1.9 nC @ 12 V
Grade-
Mounting TypeSurface Mount
Product StatusActive
Rds On (Max) @ Id, Vgs182mOhm @ 900mA, 12V
Vgs(th) (Max) @ Id4.2V @ 4.2mA
Supplier Device Package16-DFN (8x8)
Drain to Source Voltage (Vdss)650 V
SeriesICeGaN™
Power Dissipation (Max)-
Qualification-
Package / Case16-PowerVDFN
TechnologyGaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C12A
Vgs (Max)+20V, -1V
Drive Voltage (Max Rds On, Min Rds On)12V

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