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Home > Products > Transistors > FETs, MOSFETs > ///TPN1600ANH,L1Q

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TPN1600ANH,L1QQuantity:4517

Part No TPN1600ANH,L1Q
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N CH 100V 17A 8TSON-ADV
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id±20V
Vgs(th)(Max)@Id700mW (Ta), 42W (Tc)
Vgs-
FETFeature8-TSON Advance (3.1x3.1)
DraintoSourceVoltage(Vdss)100 V
OperatingTemperature16mOhm @ 8.5A, 10V
DriveVoltage(MaxRdsOn10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType19 nC @ 10 V
InputCapacitance(Ciss)(Max)@VdsSurface Mount
SeriesU-MOSVIII-H
Qualification
SupplierDevicePackage1600 pF @ 50 V
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C17A (Tc)
Vgs(Max)150°C (TJ)
MinRdsOn)4V @ 200µA
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)8-PowerVDFN

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