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Home > Products > Transistors > FETs, MOSFETs > ///TPN11006PL,LQ

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TPN11006PL,LQQuantity:3762

Part No TPN11006PL,LQ
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 60V 26A 8TSON
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id2.5V @ 200µA
Vgs(th)(Max)@Id±20V
Vgs17 nC @ 10 V
FETFeature610mW (Ta), 61W (Tc)
DraintoSourceVoltage(Vdss)60 V
OperatingTemperature-
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/Case8-PowerVDFN
GateCharge(Qg)(Max)@Vgs8-TSON Advance (3.1x3.1)
Grade
MountingType-
InputCapacitance(Ciss)(Max)@Vds-
SeriesU-MOSIX-H
Qualification
SupplierDevicePackageSurface Mount
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C26A (Tc)
Vgs(Max)1625 pF @ 30 V
MinRdsOn)11.4mOhm @ 13A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)175°C

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