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Part No TPN1110ENH,L1Q
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 200V 7.2A 8TSON
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id4V @ 200µA
Vgs(th)(Max)@Id±20V
Vgs7 nC @ 10 V
FETFeature700mW (Ta), 39W (Tc)
DraintoSourceVoltage(Vdss)200 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType8-TSON Advance (3.1x3.1)
InputCapacitance(Ciss)(Max)@Vds-
SeriesU-MOSVIII-H
Qualification
SupplierDevicePackage8-PowerVDFN
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C7.2A (Ta)
Vgs(Max)600 pF @ 100 V
MinRdsOn)114mOhm @ 3.6A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)150°C (TJ)

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