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Buy TPN1200APL,L1Q with confidence from acme-chip.com, 1 Year Warranty
See Product Specifications for product details.
Buy TPN1200APL,L1Q with confidence from acme-chip.com, 1 Year Warranty
TPN1200APL,L1QQuantity:3719
Part No | TPN1200APL,L1Q |
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Manufacturer | Toshiba Semiconductor and Storage |
Description | PB-F POWER MOSFET TRANSISTOR TSO |
Lead Free Status / RoHS Status | Contains lead / RoHS compliant |
Datasheets |
Specifications
RdsOn(Max)@Id | 2.5V @ 300µA |
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Vgs(th)(Max)@Id | ±20V |
Vgs | 24 nC @ 10 V |
FETFeature | 630mW (Ta), 104W (Tc) |
DraintoSourceVoltage(Vdss) | 100 V |
OperatingTemperature | - |
DriveVoltage(MaxRdsOn | 4.5V, 10V |
ProductStatus | Active |
Package/Case | 8-TSON Advance (3.1x3.1) |
GateCharge(Qg)(Max)@Vgs | 8-PowerVDFN |
Grade | |
MountingType | - |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | U-MOSIX-H |
Qualification | |
SupplierDevicePackage | Surface Mount |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 40A (Tc) |
Vgs(Max) | 1855 pF @ 50 V |
MinRdsOn) | 11.5mOhm @ 20A, 10V |
Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
PowerDissipation(Max) | 175°C |
Introduce
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