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Home > Products > Transistors > FETs, MOSFETs > ///TPN1200APL,L1Q

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TPN1200APL,L1QQuantity:3719

Part No TPN1200APL,L1Q
Manufacturer Toshiba Semiconductor and Storage
Description PB-F POWER MOSFET TRANSISTOR TSO
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id2.5V @ 300µA
Vgs(th)(Max)@Id±20V
Vgs24 nC @ 10 V
FETFeature630mW (Ta), 104W (Tc)
DraintoSourceVoltage(Vdss)100 V
OperatingTemperature-
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/Case8-TSON Advance (3.1x3.1)
GateCharge(Qg)(Max)@Vgs8-PowerVDFN
Grade
MountingType-
InputCapacitance(Ciss)(Max)@Vds-
SeriesU-MOSIX-H
Qualification
SupplierDevicePackageSurface Mount
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C40A (Tc)
Vgs(Max)1855 pF @ 50 V
MinRdsOn)11.5mOhm @ 20A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)175°C

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