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Buy SIR646DP-T1-GE3 with confidence from acme-chip.com, 1 Year Warranty
See Product Specifications for product details.
Buy SIR646DP-T1-GE3 with confidence from acme-chip.com, 1 Year Warranty
SIR646DP-T1-GE3Quantity:5619
Part No | SIR646DP-T1-GE3 |
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Manufacturer | Vishay |
Description | MOSFET N-CH 40V 60A PPAK 8SO |
Lead Free Status / RoHS Status | Lead Free / RoHS compliant |
Datasheets |
Reference Price (In US Dollars) | Get a Quote |
Specifications
Drain to Source Voltage (Vdss): | 40V |
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Power Dissipation (Max): | 5W (Ta), 54W (Tc) |
Package / Case: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Packaging: | Cut Tape (CT) |
Supplier Device Package: | PowerPAK® SO-8 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Detailed Description: | N-Channel 40V 60A (Tc) 5W (Ta), 54W (Tc) Surface Mount PowerPAK® SO-8 |
FET Feature: | - |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Email: | [email protected] |
FET Type: | N-Channel |
Series: | TrenchFET® |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Other Names: | SIR646DP-T1-GE3CT |
Input Capacitance (Ciss) (Max) @ Vds: | 2230pF @ 20V |
Vgs (Max): | ±20V |
Rds On (Max) @ Id, Vgs: | 3.8 mOhm @ 20A, 10V |
Technology: | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs: | 51nC @ 10V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Introduce
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