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Home > Products > Transistors > FETs, MOSFETs > ///SIR638DP-T1-GE3

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SIR638DP-T1-GE3Quantity:11025

Part No SIR638DP-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET N-CH 40V 100A PPAK SO-8
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id2.3V @ 250µA
Vgs(th)(Max)@Id+20V, -16V
Vgs204 nC @ 10 V
FETFeature104W (Tc)
DraintoSourceVoltage(Vdss)40 V
OperatingTemperature-
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/CasePowerPAK® SO-8
GateCharge(Qg)(Max)@VgsPowerPAK® SO-8
Grade
MountingType-
InputCapacitance(Ciss)(Max)@Vds-
SeriesTrenchFET®
Qualification
SupplierDevicePackageSurface Mount
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C100A (Tc)
Vgs(Max)10500 pF @ 20 V
MinRdsOn)0.88mOhm @ 20A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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