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Home > Products > Transistors > FETs, MOSFETs > ///SIR606BDP-T1-RE3

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Part No SIR606BDP-T1-RE3
Manufacturer Vishay Siliconix
Description MOSFET N-CH 100V 10.9A PPAK
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id4V @ 250µA
Vgs(th)(Max)@Id±20V
Vgs30 nC @ 10 V
FETFeature5W (Ta), 62.5W (Tc)
DraintoSourceVoltage(Vdss)100 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn7.5V, 10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypePowerPAK® SO-8
InputCapacitance(Ciss)(Max)@Vds-
SeriesTrenchFET® Gen IV
Qualification
SupplierDevicePackagePowerPAK® SO-8
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C10.9A (Ta), 38.7A (Tc)
Vgs(Max)1470 pF @ 50 V
MinRdsOn)17.4mOhm @ 10A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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