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Home > Products > Transistors > FETs, MOSFETs > ///SIR624DP-T1-RE3

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SIR624DP-T1-RE3Quantity:4566

Part No SIR624DP-T1-RE3
Manufacturer Vishay Siliconix
Description MOSFET N-CH 200V 5.7A/18.6A PPAK
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id4V @ 250µA
Vgs(th)(Max)@Id±20V
Vgs30 nC @ 10 V
FETFeature5W (Ta), 52W (Tc)
DraintoSourceVoltage(Vdss)200 V
OperatingTemperature-
DriveVoltage(MaxRdsOn7.5V, 10V
ProductStatusActive
Package/CasePowerPAK® SO-8
GateCharge(Qg)(Max)@VgsPowerPAK® SO-8
Grade
MountingType-
InputCapacitance(Ciss)(Max)@Vds-
SeriesThunderFET®
Qualification
SupplierDevicePackageSurface Mount
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C5.7A (Ta), 18.6A (Tc)
Vgs(Max)1110 pF @ 100 V
MinRdsOn)60mOhm @ 10A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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