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Home > Products > Transistors > FETs, MOSFETs > ///NVBG080N120SC1

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NVBG080N120SC1Quantity:6450

Part No NVBG080N120SC1
Manufacturer onsemi
Description SICFET N-CH 1200V 30A D2PAK-7
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

RdsOn(Max)@Id4.3V @ 5mA
Vgs(th)(Max)@Id+25V, -15V
Vgs56 nC @ 20 V
FETFeature179W (Tc)
DraintoSourceVoltage(Vdss)1200 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn20V
ProductStatusActive
Package/CaseAutomotive
GateCharge(Qg)(Max)@VgsAEC-Q101
Grade
MountingTypeD2PAK-7
InputCapacitance(Ciss)(Max)@Vds-
Series-
Qualification
SupplierDevicePackageTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
Current-ContinuousDrain(Id)@25°C30A (Tc)
Vgs(Max)1154 pF @ 800 V
MinRdsOn)110mOhm @ 20A, 20V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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