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Home > Products > Transistors > FETs, MOSFETs > ///NVBG030N120M3S

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NVBG030N120M3SQuantity:3250

Part No NVBG030N120M3S
Manufacturer onsemi
Description SILICON CARBIDE (SIC) MOSFET - E
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id4.4V @ 15mA
Vgs(th)(Max)@Id2430 pF @ 800 V
Vgs107 nC @ 18 V
FETFeature-55°C ~ 175°C (TJ)
DraintoSourceVoltage(Vdss)1200 V
OperatingTemperature-
DriveVoltage(MaxRdsOn18V
ProductStatusActive
Package/CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
GateCharge(Qg)(Max)@Vgs+22V, -10V
Grade
MountingTypeSurface Mount
InputCapacitance(Ciss)(Max)@Vds348W (Tc)
SeriesAutomotive, AEC-Q101
Qualification
SupplierDevicePackageD2PAK-7
FETTypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Current-ContinuousDrain(Id)@25°C77A (Tc)
Vgs(Max)-
MinRdsOn)39mOhm @ 30A, 18V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-

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