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Home > Products > Transistors > FETs, MOSFETs > ///NVBG070N120M3S

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NVBG070N120M3SQuantity:2732

Part No NVBG070N120M3S
Manufacturer onsemi
Description SILICON CARBIDE (SIC) MOSFET-ELI
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id4.4V @ 7mA
Vgs(th)(Max)@Id+22V, -10V
Vgs57 nC @ 18 V
FETFeature172W (Tc)
DraintoSourceVoltage(Vdss)1200 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn18V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeD2PAK-7
InputCapacitance(Ciss)(Max)@Vds-
SeriesAutomotive, AEC-Q101
Qualification
SupplierDevicePackageTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
FETTypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Current-ContinuousDrain(Id)@25°C36A (Tc)
Vgs(Max)1230 pF @ 800 V
MinRdsOn)87mOhm @ 15A, 18V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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