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Home > Products > Transistors > FETs, MOSFETs > ///NVBG020N090SC1

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NVBG020N090SC1Quantity:7743

Part No NVBG020N090SC1
Manufacturer onsemi
Description SICFET N-CH 900V 9.8A/112A D2PAK
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

RdsOn(Max)@Id4.3V @ 20mA
Vgs(th)(Max)@Id+19V, -10V
Vgs200 nC @ 15 V
FETFeature3.7W (Ta), 477W (Tc)
DraintoSourceVoltage(Vdss)900 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn15V
ProductStatusActive
Package/CaseAutomotive
GateCharge(Qg)(Max)@VgsAEC-Q101
Grade
MountingTypeD2PAK-7
InputCapacitance(Ciss)(Max)@Vds-
Series-
Qualification
SupplierDevicePackageTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
Current-ContinuousDrain(Id)@25°C9.8A (Ta), 112A (Tc)
Vgs(Max)4415 pF @ 450 V
MinRdsOn)28mOhm @ 60A, 15V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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