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Home > Products > Transistors > FETs, MOSFETs > ///SCTH70N120G2V-7

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SCTH70N120G2V-7Quantity:5050

Part No SCTH70N120G2V-7
Manufacturer STMicroelectronics
Description SILICON CARBIDE POWER MOSFET 120
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

RdsOn(Max)@Id4.9V @ 1mA
Vgs(th)(Max)@Id+22V, -10V
Vgs150 nC @ 18 V
FETFeature469W (Tc)
DraintoSourceVoltage(Vdss)1200 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn18V
ProductStatusActive
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingTypeH2PAK-7
InputCapacitance(Ciss)(Max)@Vds-
Series-
Qualification
SupplierDevicePackageTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
Current-ContinuousDrain(Id)@25°C90A (Tc)
Vgs(Max)3540 pF @ 800 V
MinRdsOn)30mOhm @ 50A, 18V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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