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Home > Products > Transistors > FETs, MOSFETs > ///SCTH40N120G2V-7

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Part No SCTH40N120G2V-7
Manufacturer STMicroelectronics
Description SILICON CARBIDE POWER MOSFET 120
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id4.9V @ 1mA
Vgs(th)(Max)@Id+22V, -10V
Vgs61 nC @ 18 V
FETFeature238W (Tc)
DraintoSourceVoltage(Vdss)1200 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn18V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeH2PAK-7
InputCapacitance(Ciss)(Max)@Vds-
Series-
Qualification
SupplierDevicePackage-
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
Current-ContinuousDrain(Id)@25°C36A (Tc)
Vgs(Max)1233 pF @ 800 V
MinRdsOn)100mOhm @ 20A, 18V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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