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Home > Products > Transistors > FETs, MOSFETs > ///SCTH35N65G2V-7

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SCTH35N65G2V-7Quantity:5354

Part No SCTH35N65G2V-7
Manufacturer STMicroelectronics
Description SICFET N-CH 650V 45A H2PAK-7
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

RdsOn(Max)@Id67mOhm @ 20A, 20V
Vgs(th)(Max)@Id73 nC @ 20 V
Vgs5V @ 1mA
FETFeature208W (Tc)
DraintoSourceVoltage(Vdss)N-Channel
OperatingTemperature-
DriveVoltage(MaxRdsOn45A (Tc)
ProductStatusActive
Package/CaseH2PAK-7
GateCharge(Qg)(Max)@VgsTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Grade
MountingType-
InputCapacitance(Ciss)(Max)@Vds1370 pF @ 400 V
Series-
Qualification
SupplierDevicePackageSurface Mount
FETTypeSiCFET (Silicon Carbide)
Technology-
Current-ContinuousDrain(Id)@25°C650 V
Vgs(Max)+22V, -10V
MinRdsOn)18V, 20V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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