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Home > Products > Transistors > FETs, MOSFETs > ///IPD26N06S2L35ATMA2

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IPD26N06S2L35ATMA2Quantity:13994

Part No IPD26N06S2L35ATMA2
Manufacturer Infineon Technologies
Description MOSFET N-CH 55V 30A TO252-31
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id2V @ 26µA
Vgs(th)(Max)@Id±20V
Vgs24 nC @ 10 V
FETFeature68W (Tc)
DraintoSourceVoltage(Vdss)55 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypePG-TO252-3-11
InputCapacitance(Ciss)(Max)@Vds-
SeriesOptiMOS™
Qualification
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C30A (Tc)
Vgs(Max)621 pF @ 25 V
MinRdsOn)35mOhm @ 13A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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