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Home > Products > Transistors > FETs, MOSFETs > ///IPD200N15N3GBTMA1

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Part No IPD200N15N3GBTMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 150V 50A TO252-3
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

RdsOn(Max)@Id31 nC @ 10 V
Vgs(th)(Max)@Id-
Vgs1820 pF @ 75 V
FETFeatureSurface Mount
DraintoSourceVoltage(Vdss)150 V
OperatingTemperatureTO-252-3, DPak (2 Leads + Tab), SC-63
DriveVoltage(MaxRdsOn20mOhm @ 50A, 10V
ProductStatusObsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType8V, 10V
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 175°C (TJ)
SeriesOptiMOS™
Qualification
SupplierDevicePackage±20V
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C50A (Tc)
Vgs(Max)150W (Tc)
MinRdsOn)4V @ 90µA
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)PG-TO252-3

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