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IPD25CNE8NGQuantity:14064

Part No IPD25CNE8NG
Manufacturer
Description Power Field-Effect Transistor, 35A I(D), 85V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Min Operating Temperature-55 °C
Drain to Source Breakdown Voltage85 V
Gate to Source Voltage (Vgs)20 V
MountSurface Mount
Fall Time3 ns
RoHSCompliant
Max Operating Temperature175 °C
Drain to Source Voltage (Vdss)85 V
Power Dissipation71 W
Drain to Source Resistance25 mΩ
Continuous Drain Current (ID)35 A
Element ConfigurationSingle
Rise Time4 ns
Turn-Off Delay Time13 ns
Input Capacitance2.07 nF
Rds On Max25 mΩ
Case/PackageTO-252-3
Max Power Dissipation71 W

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