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Home > Products > Transistors > FETs, MOSFETs > ///IPD25CNE8N G

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IPD25CNE8N GQuantity:3965

Part No IPD25CNE8N G
Manufacturer Infineon Technologies
Description MOSFET N-CH 85V 35A TO252-3
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id4V @ 39µA
Vgs(th)(Max)@Id±20V
Vgs31 nC @ 10 V
FETFeature71W (Tc)
DraintoSourceVoltage(Vdss)85 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn10V
ProductStatusObsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingTypePG-TO252-3
InputCapacitance(Ciss)(Max)@Vds-
SeriesOptiMOS™
Qualification
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C35A (Tc)
Vgs(Max)2070 pF @ 40 V
MinRdsOn)25mOhm @ 35A, 10V
PackageTape & Reel (TR)
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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