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Home > Products > Transistors > FETs, MOSFETs > ///IPB100N08S207ATMA1

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Part No IPB100N08S207ATMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 75V 100A TO263-3
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

RdsOn(Max)@Id4V @ 250µA
Vgs(th)(Max)@Id±20V
Vgs200 nC @ 10 V
FETFeature300W (Tc)
DraintoSourceVoltage(Vdss)75 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn10V
ProductStatusLast Time Buy
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypePG-TO263-3-2
InputCapacitance(Ciss)(Max)@Vds-
SeriesOptiMOS™
Qualification
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C100A (Tc)
Vgs(Max)4700 pF @ 25 V
MinRdsOn)6.8mOhm @ 80A, 10V
PackageTape & Reel (TR)
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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