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Home > Products > Transistors > FETs, MOSFETs > ///IPB100N04S303ATMA1

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Part No IPB100N04S303ATMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 40V 100A TO263-3
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id4V @ 150µA
Vgs(th)(Max)@Id±20V
Vgs145 nC @ 10 V
FETFeature214W (Tc)
DraintoSourceVoltage(Vdss)40 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn10V
ProductStatusNot For New Designs
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypePG-TO263-3-2
InputCapacitance(Ciss)(Max)@Vds-
SeriesOptiMOS™
Qualification
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C100A (Tc)
Vgs(Max)9600 pF @ 25 V
MinRdsOn)2.5mOhm @ 80A, 10V
PackageTape & Reel (TR)
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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