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Home > Products > Transistors > FETs, MOSFETs > ///IPB100N06S3-03

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IPB100N06S3-03Quantity:12527

Part No IPB100N06S3-03
Manufacturer Infineon Technologies
Description MOSFET N-CH 55V 100A TO263-3
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

RdsOn(Max)@Id21620 pF @ 25 V
Vgs(th)(Max)@Id300W (Tc)
Vgs-
FETFeaturePG-TO263-3-2
DraintoSourceVoltage(Vdss)55 V
OperatingTemperature10V
DriveVoltage(MaxRdsOn3mOhm @ 80A, 10V
ProductStatusObsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType±20V
InputCapacitance(Ciss)(Max)@VdsSurface Mount
SeriesOptiMOS™
Qualification
SupplierDevicePackage480 nC @ 10 V
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C100A (Tc)
Vgs(Max)-55°C ~ 175°C (TJ)
MinRdsOn)4V @ 230µA
PackageTape & Reel (TR)
PowerDissipation(Max)TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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