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Home > Products > Transistors > FETs, MOSFETs > ///BSM600D12P4G103

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BSM600D12P4G103Quantity:3440

Part No BSM600D12P4G103
Manufacturer Rohm Semiconductor
Description SIC 2N-CH 1200V 567A MODULE
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id-
Vgs(th)(Max)@Id-
Vgs4.8V @ 291.2mA
Configuration2 N-Channel
FETFeatureStandard
DraintoSourceVoltage(Vdss)1200V (1.2kV)
OperatingTemperatureChassis Mount
ProductStatusActive
Package/CaseModule
GateCharge(Qg)(Max)@Vgs59000pF @ 10V
Grade-
MountingTypeModule
InputCapacitance(Ciss)(Max)@Vds1.78kW (Tc)
Series-
Qualification
SupplierDevicePackage-
TechnologySilicon Carbide (SiC)
Current-ContinuousDrain(Id)@25°C567A (Tc)
PackageBox
Power-Max175°C (TJ)

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