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Home > Products > Transistors > FETs, MOSFETs > ///BSM600C12P3G201

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BSM600C12P3G201Quantity:4031

Part No BSM600C12P3G201
Manufacturer Rohm Semiconductor
Description SICFET N-CH 1200V 600A MODULE
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id5.6V @ 182mA
Vgs(th)(Max)@Id+22V, -4V
Vgs-
FETFeature2460W (Tc)
DraintoSourceVoltage(Vdss)1200 V
OperatingTemperatureChassis Mount
DriveVoltage(MaxRdsOn-
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeModule
InputCapacitance(Ciss)(Max)@Vds-
Series-
Qualification
SupplierDevicePackageModule
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
Current-ContinuousDrain(Id)@25°C600A (Tc)
Vgs(Max)28000 pF @ 10 V
MinRdsOn)-
PackageTray
PowerDissipation(Max)175°C (TJ)

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