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Home > Products > Transistors > FETs, MOSFETs > ///BSM600D12P3G001

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BSM600D12P3G001Quantity:2907

Part No BSM600D12P3G001
Manufacturer Rohm Semiconductor
Description SIC 2N-CH 1200V 600A MODULE
Lead Free Status / RoHS Status Contains lead / RoHS compliant
Datasheets
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Specifications

RdsOn(Max)@Id-
Vgs(th)(Max)@Id-
Vgs5.6V @ 182mA
Configuration2 N-Channel (Half Bridge)
FETFeature-
DraintoSourceVoltage(Vdss)1200V (1.2kV)
OperatingTemperatureModule
ProductStatusActive
Package/CaseChassis Mount
GateCharge(Qg)(Max)@Vgs31000pF @ 10V
Grade-
MountingTypeModule
InputCapacitance(Ciss)(Max)@Vds2450W (Tc)
Series-
Qualification
SupplierDevicePackage-
TechnologySilicon Carbide (SiC)
Current-ContinuousDrain(Id)@25°C600A (Tc)
PackageBulk
Power-Max-40°C ~ 150°C (TJ)

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