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Home > Products > Transistors > FETs, MOSFETs > ///TSM60NB099PW C1G

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TSM60NB099PW C1GQuantity:3987

Part No TSM60NB099PW C1G
Manufacturer Taiwan Semiconductor Corporation
Description MOSFET N-CHANNEL 600V 38A TO247
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id4V @ 250µA
Vgs(th)(Max)@Id±30V
Vgs62 nC @ 10 V
FETFeature-55°C ~ 150°C (TJ)
DraintoSourceVoltage(Vdss)600 V
OperatingTemperatureTO-247
DriveVoltage(MaxRdsOn10V
ProductStatusNot For New Designs
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeTO-247-3
InputCapacitance(Ciss)(Max)@Vds329W (Tc)
Series-
Qualification
SupplierDevicePackage2587 pF @ 100 V
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C38A (Tc)
Vgs(Max)-
MinRdsOn)99mOhm @ 11.7A, 10V
PackageTube
PowerDissipation(Max)Through Hole

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