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Home > Products > Transistors > FETs, MOSFETs > ///TSM60NB041PW C1G

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TSM60NB041PW C1GQuantity:20055

Part No TSM60NB041PW C1G
Manufacturer Taiwan Semiconductor Corporation
Description MOSFET N-CHANNEL 600V 78A TO247
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id4V @ 250µA
Vgs(th)(Max)@Id±30V
Vgs139 nC @ 10 V
FETFeature446W (Tc)
DraintoSourceVoltage(Vdss)600 V
OperatingTemperature-
DriveVoltage(MaxRdsOn10V
ProductStatusNot For New Designs
Package/CaseTO-247
GateCharge(Qg)(Max)@VgsTO-247-3
Grade
MountingType-
InputCapacitance(Ciss)(Max)@Vds-
Series-
Qualification
SupplierDevicePackageThrough Hole
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C78A (Tc)
Vgs(Max)6120 pF @ 100 V
MinRdsOn)41mOhm @ 21.7A, 10V
PackageTube
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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