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Home > Products > Transistors > FETs, MOSFETs > ///TPW1R306PL,L1Q

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Part No TPW1R306PL,L1Q
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 60V 260A 8DSOP
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id2.5V @ 1mA
Vgs(th)(Max)@Id±20V
Vgs91 nC @ 10 V
FETFeature960mW (Ta), 170W (Tc)
DraintoSourceVoltage(Vdss)60 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType8-DSOP Advance
InputCapacitance(Ciss)(Max)@Vds-
SeriesU-MOSIX-H
Qualification
SupplierDevicePackage8-PowerWDFN
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C260A (Tc)
Vgs(Max)8100 pF @ 30 V
MinRdsOn)1.29mOhm @ 50A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)175°C

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