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Home > Products > Transistors > FETs, MOSFETs > ///TPW1R104PB,L1XHQ

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Part No TPW1R104PB,L1XHQ
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 40V 120A 8DSOP
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id3V @ 500µA
Vgs(th)(Max)@Id±20V
Vgs55 nC @ 10 V
FETFeature960mW (Ta), 132W (Tc)
DraintoSourceVoltage(Vdss)40 V
OperatingTemperature-
DriveVoltage(MaxRdsOn6V, 10V
ProductStatusActive
Package/Case8-DSOP Advance
GateCharge(Qg)(Max)@Vgs8-PowerVDFN
Grade
MountingType-
InputCapacitance(Ciss)(Max)@Vds-
SeriesU-MOSIX-H
Qualification
SupplierDevicePackageSurface Mount
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C120A (Ta)
Vgs(Max)4560 pF @ 10 V
MinRdsOn)1.14mOhm @ 60A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)175°C

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