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Home > Products > Transistors > FETs, MOSFETs > ///TK65G10N1,RQ

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TK65G10N1,RQQuantity:4886

Part No TK65G10N1,RQ
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 100V 65A D2PAK
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id4V @ 1mA
Vgs(th)(Max)@Id±20V
Vgs81 nC @ 10 V
FETFeature156W (Tc)
DraintoSourceVoltage(Vdss)100 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn10V
ProductStatusObsolete
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeD2PAK
InputCapacitance(Ciss)(Max)@Vds-
SeriesU-MOSVIII-H
Qualification
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C65A (Ta)
Vgs(Max)5400 pF @ 50 V
MinRdsOn)4.5mOhm @ 32.5A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)150°C (TJ)

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