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Home > Products > Transistors > FETs, MOSFETs > ///TK65E10N1,S1X

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Part No TK65E10N1,S1X
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N CH 100V 148A TO220
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id4V @ 1mA
Vgs(th)(Max)@Id±20V
Vgs81 nC @ 10 V
FETFeature192W (Tc)
DraintoSourceVoltage(Vdss)100 V
OperatingTemperatureThrough Hole
DriveVoltage(MaxRdsOn10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeTO-220
InputCapacitance(Ciss)(Max)@Vds-
SeriesU-MOSVIII-H
Qualification
SupplierDevicePackageTO-220-3
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C148A (Ta)
Vgs(Max)5400 pF @ 50 V
MinRdsOn)4.8mOhm @ 32.5A, 10V
PackageTube
PowerDissipation(Max)150°C (TJ)

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