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SIB417DK-T1-GE3Quantity:6065

Part No SIB417DK-T1-GE3
Manufacturer Vishay
Description MOSFET P-CH 8V 9A SC75-6
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Drain to Source Voltage (Vdss):8V
Power Dissipation (Max):2.4W (Ta), 13W (Tc)
Package / Case:PowerPAK® SC-75-6L
Mounting Type:Surface Mount
Packaging:Tape & Reel (TR)
Supplier Device Package:PowerPAK® SC-75-6L Single
Vgs(th) (Max) @ Id:1V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:P-Channel 8V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6L Single
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:[email protected]
FET Type:P-Channel
Series:TrenchFET®
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Other Names:SIB417DK-T1-GE3TR SIB417DKT1GE3
Input Capacitance (Ciss) (Max) @ Vds:675pF @ 4V
Vgs (Max):±5V
Rds On (Max) @ Id, Vgs:52 mOhm @ 5.6A, 4.5V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:12.75nC @ 5V
Operating Temperature:-55°C ~ 150°C (TJ)

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