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SIB419DK-T1-GE3Quantity:6011

Part No SIB419DK-T1-GE3
Manufacturer Vishay Siliconix
Description Mosfet P-ch 12V 9A SC75-6
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Min Operating Temperature-55 °C
Threshold Voltage-1 V
Dual Supply Voltage12 V
MountSurface Mount
Fall Time9 ns
RoHSCompliant
Drain to Source Voltage (Vdss)12 V
Drain to Source Resistance89 mΩ
Number of Channels1
Number of Pins6
Height750 µm
Number of Elements1
Input Capacitance562 pF
Width1.6 mm
Rds On Max60 mΩ
Max Power Dissipation2.45 W
Drain to Source Breakdown Voltage-12 V
Nominal Vgs-1 V
Gate to Source Voltage (Vgs)8 V
REACH SVHCUnknown
TerminationSMD/SMT
Turn-On Delay Time16 ns
Weight95.991485 mg
Max Operating Temperature150 °C
Power Dissipation2.45 W
Continuous Drain Current (ID)9 A
Rise Time42 ns
Length1.6 mm
Turn-Off Delay Time28 ns
Case/PackageSC

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