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Home > Products > Transistors > FETs, MOSFETs > ///SI8819EDB-T2-E1

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SI8819EDB-T2-E1Quantity:6600

Part No SI8819EDB-T2-E1
Manufacturer Vishay Siliconix
Description MOSFET P-CH 12V 2.9A 4MICRO FOOT
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id900mV @ 250µA
Vgs(th)(Max)@Id±8V
Vgs17 nC @ 8 V
FETFeature900mW (Ta)
DraintoSourceVoltage(Vdss)12 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn1.5V, 3.7V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType4-MICRO FOOT® (0.8x0.8)
InputCapacitance(Ciss)(Max)@Vds-
Series-
Qualification
SupplierDevicePackage4-XFBGA
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C2.9A (Ta)
Vgs(Max)650 pF @ 6 V
MinRdsOn)80mOhm @ 1.5A, 3.7V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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