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Home > Products > Transistors > FETs, MOSFETs > ///SI8806DB-T2-E1

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Part No SI8806DB-T2-E1
Manufacturer Vishay Siliconix
Description MOSFET N-CH 12V 4MICROFOOT
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

RdsOn(Max)@Id1V @ 250µA
Vgs(th)(Max)@Id±8V
Vgs17 nC @ 8 V
FETFeature500mW (Ta)
DraintoSourceVoltage(Vdss)12 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn1.8V, 4.5V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType4-Microfoot
InputCapacitance(Ciss)(Max)@Vds-
SeriesTrenchFET®
Qualification
SupplierDevicePackage4-XFBGA
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C2.8A (Ta)
Vgs(Max)-
MinRdsOn)43mOhm @ 1A, 4.5V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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