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NXPSC10650D6JQuantity:4758

Part No NXPSC10650D6J
Manufacturer WeEn Semiconductors
Description DIODE SIL CARBIDE 650V 10A DPAK
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Current-ReverseLeakage@Vr250 µA @ 650 V
SpeedNo Recovery Time > 500mA (Io)
FSurface Mount
ProductStatusObsolete
Package/CaseDPAK
Grade-
Capacitance@Vr300pF @ 1V, 1MHz
ReverseRecoveryTime(trr)0 ns
MountingTypeTO-252-3, DPak (2 Leads + Tab), SC-63
Series-
Qualification
SupplierDevicePackage175°C (Max)
Voltage-Forward(Vf)(Max)@If1.7 V @ 10 A
TechnologySiC (Silicon Carbide) Schottky
Voltage-DCReverse(Vr)(Max)650 V
OperatingTemperature-Junction-
Current-AverageRectified(Io)10A
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®

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