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NXPSC04650B6JQuantity:5652

Part No NXPSC04650B6J
Manufacturer WeEn Semiconductors
Description DIODE SIL CARBIDE 650V 4A D2PAK
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Current-ReverseLeakage@Vr130pF @ 1V, 1MHz
SpeedNo Recovery Time > 500mA (Io)
F-
ProductStatusObsolete
Package/CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Grade0 ns
Capacitance@Vr-
ReverseRecoveryTime(trr)170 µA @ 650 V
MountingTypeSurface Mount
Series-
Qualification
SupplierDevicePackageD2PAK
Voltage-Forward(Vf)(Max)@If1.7 V @ 4 A
TechnologySiC (Silicon Carbide) Schottky
Voltage-DCReverse(Vr)(Max)650 V
OperatingTemperature-Junction175°C (Max)
Current-AverageRectified(Io)4A
PackageTape & Reel (TR),Cut Tape (CT)

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