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IRFMG50Quantity:5153

Part No IRFMG50
Manufacturer
Description Power Field-Effect Transistor, 5.6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Max Junction Temperature (Tj)150 °C
Min Operating Temperature-55 °C
Drain to Source Breakdown Voltage1 kV
Nominal Vgs2 V
Gate to Source Voltage (Vgs)20 V
REACH SVHCUnknown
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
MountThrough Hole
Current Rating5.6 A
Turn-On Delay Time30 ns
RoHSNon-Compliant
Radiation HardeningNo
Max Operating Temperature150 °C
Drain to Source Voltage (Vdss)1 kV
Power Dissipation150 W
Drain to Source Resistance2 Ω
Continuous Drain Current (ID)5.6 A
Number of Channels1
Turn-Off Delay Time210 ns
Lifecycle StatusProduction (Last Updated: 2 years ago)
Number of Pins3
Height20.32 mm
Number of Elements1
Max Power Dissipation150 W

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