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IRFM140Quantity:10870

Part No IRFM140
Manufacturer
Description Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
Datasheets
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Specifications

Min Operating Temperature-55 °C
Schedule B8541290080
MountThrough Hole
RoHSNon-Compliant
Radiation HardeningNo
Drain to Source Voltage (Vdss)100 V
Drain to Source Resistance77 mΩ
Number of Channels1
Lifecycle StatusProduction (Last Updated: 2 years ago)
Number of Pins3
Height21.16 mm
Number of Elements1
Lead FreeContains Lead
Max Power Dissipation125 W
Max Junction Temperature (Tj)150 °C
Drain to Source Breakdown Voltage100 V
On-State Resistance100 mΩ
Nominal Vgs4 V
Gate to Source Voltage (Vgs)20 V
REACH SVHCNo SVHC
Turn-On Delay Time21 ns
Max Operating Temperature150 °C
Power Dissipation125 W
Continuous Drain Current (ID)28 A
Turn-Off Delay Time64 ns

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