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Home > Products > Transistors > FETs, MOSFETs > ///IPT029N08N5ATMA1

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IPT029N08N5ATMA1Quantity:6750

Part No IPT029N08N5ATMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 80V 52A/169A HSOF-8
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

RdsOn(Max)@Id3.8V @ 108µA
Vgs(th)(Max)@Id±20V
Vgs87 nC @ 10 V
FETFeature168W (Tc)
DraintoSourceVoltage(Vdss)80 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn6V, 10V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypePG-HSOF-8-1
InputCapacitance(Ciss)(Max)@Vds-
SeriesOptiMOS™ 5
Qualification
SupplierDevicePackage8-PowerSFN
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C52A (Ta), 169A (Tc)
Vgs(Max)6500 pF @ 40 V
MinRdsOn)2.9mOhm @ 150A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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